Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFX38N80Q2 Wickmann / Littelfuse	MOSFET N-CH 800V 38A PLUS247-3	0
VMO580-02F Wickmann / Littelfuse	MOSFET N-CH 200V 580A Y3-LI	0
IXFK180N25T Wickmann / Littelfuse	MOSFET N-CH 250V 180A TO264AA	5512125
IXTA76P10T-TRL Wickmann / Littelfuse	MOSFET P-CH 100V 76A TO263	706
IXFN180N25T Wickmann / Littelfuse	MOSFET N-CH 250V 168A SOT227B	3
IXTP80N12T2 Wickmann / Littelfuse	MOSFET N-CH 120V 80A TO220AB	6500
IXFN400N15X3 Wickmann / Littelfuse	MOSFET N-CH 150V 400A SOT227B	10
IXTA70N075T2-TRL Wickmann / Littelfuse	MOSFET N-CH 75V 70A TO263	0
IXTH86N20T Wickmann / Littelfuse	MOSFET N-CH 200V 86A TO247	0
IXTT16P60P Wickmann / Littelfuse	MOSFET P-CH 600V 16A TO268	1922730
IXTK90N25L2 Wickmann / Littelfuse	MOSFET N-CH 250V 90A TO264	736
IXFR24N90P Wickmann / Littelfuse	MOSFET N-CH 900V 13A ISOPLUS247	0
IXFP110N15T2 Wickmann / Littelfuse	MOSFET N-CH 150V 110A TO220AB	0
IXFH16N50P Wickmann / Littelfuse	MOSFET N-CH 500V 16A TO247AD	81
IXFR38N80Q2 Wickmann / Littelfuse	MOSFET N-CH 800V 28A ISOPLUS247	0
IXTQ52P10P Wickmann / Littelfuse	MOSFET P-CH 100V 52A TO3P	6757450
IXFH60N60X Wickmann / Littelfuse	MOSFET N-CH 600V 60A TO247	2160
IXTH1N450HV Wickmann / Littelfuse	MOSFET N-CH 4500V 1A TO247HV	90
IXTK120N25P Wickmann / Littelfuse	MOSFET N-CH 250V 120A TO264	53
IXTA220N04T2-TRL Wickmann / Littelfuse	MOSFET N-CH 40V 220A TO263	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS