Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFK64N60P Wickmann / Littelfuse	MOSFET N-CH 600V 64A TO264AA	911075
IXTT1N450HV Wickmann / Littelfuse	MOSFET N-CH 4500V 1A TO268	0
IXTN40P50P Wickmann / Littelfuse	MOSFET P-CH 500V 40A SOT227B	8180
IXFT50N60X Wickmann / Littelfuse	MOSFET N-CH 600V 50A TO268	3120
IXFK360N10T Wickmann / Littelfuse	MOSFET N-CH 100V 360A TO264AA	222950
IXFH12N90 Wickmann / Littelfuse	MOSFET N-CH 900V 12A TO247AD	0
IXTA08N100D2 Wickmann / Littelfuse	MOSFET N-CH 1000V 800MA TO263	2547
IXTK140N20P Wickmann / Littelfuse	MOSFET N-CH 200V 140A TO264	252225
IXFA6N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 6A TO263	3717
IXFT12N90Q Wickmann / Littelfuse	MOSFET N-CH 900V 12A TO268	0
IXTH24N50L Wickmann / Littelfuse	MOSFET N-CH 500V 24A TO247	0
IXTP70N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 70A TO220AB	72
IXFA30N60X Wickmann / Littelfuse	MOSFET N-CH 600V 30A TO263	0
IXTT88N30P Wickmann / Littelfuse	MOSFET N-CH 300V 88A TO268	0
IXFQ60N25X3 Wickmann / Littelfuse	MOSFET N-CHANNEL 250V 60A TO3P	1680
IXTH30N50P Wickmann / Littelfuse	MOSFET N-CH 500V 30A TO247	1170
IXFY36N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 36A TO252AA	2520
IXFN180N15P Wickmann / Littelfuse	MOSFET N-CH 150V 150A SOT-227B	527
IXFB170N30P Wickmann / Littelfuse	MOSFET N-CH 300V 170A PLUS264	2600
IXTP8N70X2M Wickmann / Littelfuse	MOSFET N-CH 700V 4A TO220	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS