Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFP36N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 36A TO220	64
IXFN44N80Q3 Wickmann / Littelfuse	MOSFET N-CH 800V 37A SOT227B	2300
IXFN38N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 38A SOT-227B	107
IXTT24P20 Wickmann / Littelfuse	MOSFET P-CH 200V 24A TO268	2400
IXFN200N10P Wickmann / Littelfuse	MOSFET N-CH 100V 200A SOT-227B	60
IXFT36N60P Wickmann / Littelfuse	MOSFET N-CH 600V 36A TO268	0
IXFA36N30P3 Wickmann / Littelfuse	MOSFET N-CH 300V 36A TO263AA	1050
IXFA18N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 18A TO263	400
IXTP08N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 800MA TO220AB	2450
IXFX44N80P Wickmann / Littelfuse	MOSFET N-CH 800V 44A PLUS247-3	266
IXFT140N10P Wickmann / Littelfuse	MOSFET N-CH 100V 140A TO268	630
IXFR64N60Q3 Wickmann / Littelfuse	MOSFET N-CH 600V 42A ISOPLUS247	3120
IXFP130N10T2 Wickmann / Littelfuse	MOSFET N-CH 100V 130A TO220AB	50700
IXFX50N50 Wickmann / Littelfuse	MOSFET N-CH 500V 50A PLUS247-3	0
IXFN120N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 108A SOT227B	384
IXKC23N60C5 Wickmann / Littelfuse	MOSFET N-CH 600V 23A ISOPLUS220	44
IXFT12N100 Wickmann / Littelfuse	MOSFET N-CH 1000V 12A TO268	0
IXFK44N80P Wickmann / Littelfuse	MOSFET N-CH 800V 44A TO264AA	699
IXTK170P10P Wickmann / Littelfuse	MOSFET P-CH 100V 170A TO264	1175
IXFN300N10P Wickmann / Littelfuse	MOSFET N-CH 100V 295A SOT227B	29180

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS