Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTX120N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 120A PLUS247-3	40
IXFT60N65X2HV Wickmann / Littelfuse	MOSFET N-CH 650V 60A TO268HV	360
IXFH42N20 Wickmann / Littelfuse	MOSFET N-CH 200V 42A TO247AD	0
IXFH80N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 80A TO247	2194
IXTA05N100 Wickmann / Littelfuse	MOSFET N-CH 1000V 750MA TO263	1100
IXTR32P60P Wickmann / Littelfuse	MOSFET P-CH 600V 18A ISOPLUS247	0
IXTH300N04T2 Wickmann / Littelfuse	MOSFET N-CH 40V 300A TO247	1410
IXTP120N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 120A TO220AB	2900
IXFX48N60Q3 Wickmann / Littelfuse	MOSFET N-CH 600V 48A PLUS247-3	0
IXTA150N15X4 Wickmann / Littelfuse	MOSFET N-CH 150V 150A TO263AA	411300
IXTJ6N150 Wickmann / Littelfuse	MOSFET N-CH 1500V 3A TO247	420
IXTA32P05T-TRL Wickmann / Littelfuse	MOSFET P-CH 50V 32A TO263	0
IXFA34N65X2-TRL Wickmann / Littelfuse	MOSFET N-CH 650V 34A TO263	0
IXTA1R6N50D2 Wickmann / Littelfuse	MOSFET N-CH 500V 1.6A TO263	40
IXFT7N90Q Wickmann / Littelfuse	MOSFET N-CH 900V 7A TO268	0
IXTH40N50L2 Wickmann / Littelfuse	MOSFET N-CH 500V 40A TO247	335
IXFX40N90P Wickmann / Littelfuse	MOSFET N-CH 900V 40A PLUS247-3	480
IXFP80N25X3 Wickmann / Littelfuse	MOSFET N-CH 250V 80A TO220AB	770
IXFY26N30X3 Wickmann / Littelfuse	MOSFET N-CH 300V 26A TO252AA	461
IXFK64N50P Wickmann / Littelfuse	MOSFET N-CH 500V 64A TO264AA	28

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS