Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTA3N120-TRL Wickmann / Littelfuse	MOSFET N-CH 1200V 3A TO263	2409
IXTQ44P15T Wickmann / Littelfuse	MOSFET P-CH 150V 44A TO3P	178480
IXTT20P50P Wickmann / Littelfuse	MOSFET P-CH 500V 20A TO268	77
IXFK27N80 Wickmann / Littelfuse	MOSFET N-CH 800V 27A TO264AA	0
IXFK24N80P Wickmann / Littelfuse	MOSFET N-CH 800V 24A TO264AA	975
IXTT11P50 Wickmann / Littelfuse	MOSFET P-CH 500V 11A TO268	2640
IXTA80N10T-TRL Wickmann / Littelfuse	MOSFET N-CH 100V 80A TO263	0
IXFP76N15T2 Wickmann / Littelfuse	MOSFET N-CH 150V 76A TO220AB	76
IXFK200N10P Wickmann / Littelfuse	MOSFET N-CH 100V 200A TO264AA	251050
IXFK300N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 300A TO264	139
IXFP38N30X3M Wickmann / Littelfuse	MOSFET N-CH 300V 38A TO220	681600
IXTT1N250HV Wickmann / Littelfuse	MOSFET N-CH 2500V 1.5A TO268	270
IXFX48N60P Wickmann / Littelfuse	MOSFET N-CH 600V 48A PLUS247-3	0
IXTP48P05T Wickmann / Littelfuse	MOSFET P-CH 50V 48A TO220AB	2500
IXFX360N15T2 Wickmann / Littelfuse	MOSFET N-CH 150V 360A PLUS247-3	0
IXFN40N90P Wickmann / Littelfuse	MOSFET N-CH 900V 33A SOT227B	140
IXTP1R4N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 1.4A TO220AB	0
IXTT50P10 Wickmann / Littelfuse	MOSFET P-CH 100V 50A TO268	0
IXTP4N70X2M Wickmann / Littelfuse	MOSFET N-CH 700V 4A TO220	7100
IXTA12N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 12A TO263AA	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS