Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTH6N150 Wickmann / Littelfuse	MOSFET N-CH 1500V 6A TO247	0
IXFN100N50Q3 Wickmann / Littelfuse	MOSFET N-CH 500V 82A SOT227B	0
IXFP20N50P3M Wickmann / Littelfuse	MOSFET N-CH 500V 8A TO220AB	1150
IXTP05N100 Wickmann / Littelfuse	MOSFET N-CH 1000V 750MA TO220AB	0
IXTK33N50 Wickmann / Littelfuse	MOSFET N-CH 500V 33A TO264	0
IXTP44N10T Wickmann / Littelfuse	MOSFET N-CH 100V 44A TO220AB	0
IXTQ30N60L2 Wickmann / Littelfuse	MOSFET N-CH 600V 30A TO3P	3150
LSIC1MO120E0080 Wickmann / Littelfuse	SICFET N-CH 1200V 39A TO247-3	807
IXTP460P2 Wickmann / Littelfuse	MOSFET N-CH 500V 24A TO220AB	1050
IXTA8N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 8A TO263	404500
IXFK40N90P Wickmann / Littelfuse	MOSFET N-CH 900V 40A TO264AA	3375
IXTF02N450 Wickmann / Littelfuse	MOSFET N-CH 4500V 200MA I4PAC	1052425
IXFN30N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 30A SOT-227B	320
IXTY1N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 1A TO252	2240
IXFN210N20P Wickmann / Littelfuse	MOSFET N-CH 200V 188A SOT-227B	98
IXTA130N15X4 Wickmann / Littelfuse	MOSFET N-CH 150V 130A TO263AA	5691550
IXTR36P15P Wickmann / Littelfuse	MOSFET P-CH 150V 22A ISOPLUS247	240
IXFA38N30X3 Wickmann / Littelfuse	MOSFET N-CH 300V 38A TO263	295650
IXTA15N50L2 Wickmann / Littelfuse	MOSFET N-CH 500V 15A TO263	700
IXFP180N10T2 Wickmann / Littelfuse	MOSFET N-CH 100V 180A TO220AB	1

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS