Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFA16N50P Wickmann / Littelfuse	MOSFET N-CH 500V 16A TO263	350
IXFK32N80Q3 Wickmann / Littelfuse	MOSFET N-CH 800V 32A TO264AA	1025
IXTA130N10T Wickmann / Littelfuse	MOSFET N-CH 100V 130A TO263	543
IXTX46N50L Wickmann / Littelfuse	MOSFET N-CH 500V 46A PLUS247-3	880690
IXFK120N30T Wickmann / Littelfuse	MOSFET N-CH 300V 120A TO264AA	3525
IXFH230N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 230A TO247AD	870
IXTY10P15T Wickmann / Littelfuse	MOSFET P-CH 150V 10A TO252	1120
IXFB60N80P Wickmann / Littelfuse	MOSFET N-CH 800V 60A PLUS264	75
IXFA18N60X Wickmann / Littelfuse	MOSFET N-CH 600V 18A TO263AA	800
IXTT64N25P Wickmann / Littelfuse	MOSFET N-CH 250V 64A TO268	2850
IXTP1R6N50D2 Wickmann / Littelfuse	MOSFET N-CH 500V 1.6A TO220AB	67800
IXFP10N80P Wickmann / Littelfuse	MOSFET N-CH 800V 10A TO220AB	0
IXFR102N30P Wickmann / Littelfuse	MOSFET N-CH 300V 60A ISOPLUS247	1260
IXTP62N15P Wickmann / Littelfuse	MOSFET N-CH 150V 62A TO220AB	92150
IXFR36N50P Wickmann / Littelfuse	MOSFET N-CH 500V 19A ISOPLUS247	210
IXTA340N04T4 Wickmann / Littelfuse	MOSFET N-CH 40V 340A TO263AA	1100
IXFX24N100Q3 Wickmann / Littelfuse	MOSFET N-CH 1000V 24A PLUS247-3	0
IXFB90N85X Wickmann / Littelfuse	MOSFET N-CH 850V 90A PLUS264	0
IXTP4N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 4A TO220	2932650
IXFJ80N25X3 Wickmann / Littelfuse	MOSFET N-CH 250V 44A ISO TO247-3	450

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS