Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTH1N300P3HV Wickmann / Littelfuse	MOSFET N-CH 3000V 1A TO247HV	540
IXTK8N150L Wickmann / Littelfuse	MOSFET N-CH 1500V 8A TO264	0
IXTP26P10T Wickmann / Littelfuse	MOSFET P-CH 100V 26A TO220AB	2250
IXTP12N50PM Wickmann / Littelfuse	MOSFET N-CH 500V 6A TO220AB	0
IXTA50N25T Wickmann / Littelfuse	MOSFET N-CH 250V 50A TO263	1450
IXFR32N80P Wickmann / Littelfuse	MOSFET N-CH 800V 20A ISOPLUS247	450
IXFA8N85XHV Wickmann / Littelfuse	MOSFET N-CH 850V 8A TO263HV	0
IXTY1N80P Wickmann / Littelfuse	MOSFET N-CH 800V 1A TO252	0
IXFN320N17T2 Wickmann / Littelfuse	MOSFET N-CH 170V 260A SOT227B	50
IXTH11P50 Wickmann / Littelfuse	MOSFET P-CH 500V 11A TO247	85
IXFK36N60 Wickmann / Littelfuse	MOSFET N-CH 600V 36A TO264AA	0
IXFB82N60Q3 Wickmann / Littelfuse	MOSFET N-CH 600V 82A PLUS264	1850
IXFP60N25X3 Wickmann / Littelfuse	MOSFET N-CH 250V 60A TO220AB	97
IXTN32P60P Wickmann / Littelfuse	MOSFET P-CH 600V 32A SOT227B	300
IXFH14N80P Wickmann / Littelfuse	MOSFET N-CH 800V 14A TO247AD	300
IXFN240N25X3 Wickmann / Littelfuse	MOSFET N-CH 250V 240A SOT227B	90
IXTA110N055T2-TRL Wickmann / Littelfuse	MOSFET N-CH 55V 110A TO263	2400
IXTP06N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 600MA TO220AB	0
IXFH32N100X Wickmann / Littelfuse	MOSFET N-CH 1000V 32A TO247	130
IXFK120N25P Wickmann / Littelfuse	MOSFET N-CH 250V 120A TO264AA	675

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS