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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMPH4015SSSQ-13

DMPH4015SSSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CHANNEL 40V 11.4A 8SO

0
DMN4026SK3-13

DMN4026SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 28A TO252

2412
DMT3009UFVW-7

DMT3009UFVW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 10.6A/30A PWRDI

12000
DMN53D0L-13

DMN53D0L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 500MA SOT23

0
DMN2058UW-13

DMN2058UW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 3.5A SOT323 T&R

0
DMN6040SFDEQ-7

DMN6040SFDEQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 5.3A 6UDFN

27000
ZVN0545A

ZVN0545A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 450V 90MA TO92-3

9222
ZXM61P03FTA

ZXM61P03FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 1.1A SOT23-3

59402
DMN2046U-7

DMN2046U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 3.4A SOT23

298372
DMT10H015LCG-13

DMT10H015LCG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 9.4A/34A 8DFN

0
DMN13H750S-13

DMN13H750S-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 130V 1A SOT23

0
DMG7702SFG-13

DMG7702SFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 12A POWERDI3333

6000
DMP1555UFA-7B

DMP1555UFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 200MA 3DFN

290000
ZXMN7A11GTA

ZXMN7A11GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 70V 2.7A SOT223

14466
ZXMN2F30FHTA

ZXMN2F30FHTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 4.1A SOT23-3

87096
ZXMP2120G4TA

ZXMP2120G4TA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 200V 200MA SOT223

47
DMN2055U-7

DMN2055U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 4.8A SOT23 T&R 3

0
ZXMP6A17GQTA

ZXMP6A17GQTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 3A SOT223

4371
DMN3024LK3-13

DMN3024LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 9.78A TO252-3

72122500
DMN2450UFB4-7R

DMN2450UFB4-7R

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1A X2-DFN1006-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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