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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN65D9L-7

DMN65D9L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 335MA SOT23

2147483647
DMTH6004LPSQ-13

DMTH6004LPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A PWRDI5060-8

2500
DMTH32M5LPSQ-13

DMTH32M5LPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 170A PWRDI5060-8

0
DMP25H18DLFDE-13

DMP25H18DLFDE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 250V 260MA 6UDFN

0
DMP6350SQ-7

DMP6350SQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 1.5A SOT23

15000
DMN4030LK3-13

DMN4030LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 9.4A TO252-3

60000
MMBF170Q-7-F

MMBF170Q-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 500MA SOT23-3

3115
DMP34M4SPS-13

DMP34M4SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 135A PWRDI5060-8

1696
DMTH4008LFDFWQ-13

DMTH4008LFDFWQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 11.6A 6UDFN

704010000
DMT6007LFGQ-13

DMT6007LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 15A PWRDI3333

0
DMP3018SFV-7

DMP3018SFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 11A PWRDI3333

318000
DMT3004LPS-13

DMT3004LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 21A PWRDI5060

0
DMP21D5UFB4-7B

DMP21D5UFB4-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 700MA 3DFN

51061
DMTH6016LFDFWQ-7R

DMTH6016LFDFWQ-7R

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 9.4A 6UDFN

730
DMP2021UFDF-13

DMP2021UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 9A 6UDFN

0
DMN2058UW-7

DMN2058UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 3.5A SOT323

2147483647
BS870Q-7-F

BS870Q-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 250MA SOT23

3619
2N7002AQ-13

2N7002AQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 180MA SOT23

0
DMG4800LFG-7

DMG4800LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 7.44A 8DFN

2119
DMG9N65CT

DMG9N65CT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 650V 9A TO220AB

28

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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