ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMNH6021SPS-13

DMNH6021SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 55A PWRDI5060-8

2500
DMP26M7UFG-7

DMP26M7UFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 18A PWRDI3333

57586000
DMTH8003SPS-13

DMTH8003SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 100A PWRDI5060-8

0
DMT69M8LFV-7

DMT69M8LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 45A POWERDI3333

815
DMP3098LSS-13

DMP3098LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 5.3A 8SOP

0
DMN6017SFV-7

DMN6017SFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 35A POWERDI3333

6000
DMT615MLFV-13

DMT615MLFV-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI3333

0
DMP3165L-13

DMP3165L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3.3A SOT23 T&R

0
ZVN4210ASTZ

ZVN4210ASTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 450MA E-LINE

0
DMN2400UFD-7

DMN2400UFD-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 900MA 3DFN

2760
BSS138-7-F

BSS138-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 200MA SOT23-3

0
ZVP0545GTA

ZVP0545GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 450V 75MA SOT223

12616
DMP26M7UFG-13

DMP26M7UFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 18A PWRDI3333

0
DMP32D4S-7

DMP32D4S-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 300MA SOT23

1902
ZVNL110GTA

ZVNL110GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 600MA SOT223

5174
DMT6016LFDF-7

DMT6016LFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 8.9A 6UDFN

0
DMG3415UFY4Q-7

DMG3415UFY4Q-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 16V 2.5A X2-DFN2015

4779
DMP4025SFG-7

DMP4025SFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 4.65A PWRDI3333

0
ZVN3310A

ZVN3310A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 200MA TO92-3

2239
DMPH6050SFGQ-13

DMPH6050SFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V PWRDI3333

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top