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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMTH43M8LK3Q-13

DMTH43M8LK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHANNEL 40V 100A TO252

57500
BSS84WQ-7-F

BSS84WQ-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 50V 130MA SOT323

8638
DMT6005LCT

DMT6005LCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A TO220AB

3200
DMN62D0SFD-7

DMN62D0SFD-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 540MA 3DFN

121221000
DMG3401LSN-7

DMG3401LSN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3A SC59

2147483647
DMN2005K-7

DMN2005K-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 300MA SOT23-3

14202
DMN15H310SK3-13

DMN15H310SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 150V 8.3A TO252

0
DMN4010LFG-13

DMN4010LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 11.5A PWRDI3333

3000
DMN2026UVT-13

DMN2026UVT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 6.2A TSOT-26

20000
DMT47M2SFVWQ-7

DMT47M2SFVWQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V PWRDI3333

0
ZXMN6A07FQTA

ZXMN6A07FQTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1.2A SOT23

2125
ZXMP3F30FHTA

ZXMP3F30FHTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 2.8A SOT23

27000
DMP3068LVT-13

DMP3068LVT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 2.8A TSOT26 T&R

0
DMTH4005SK3Q-13

DMTH4005SK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 95A TO252

23862500
DMN2011UFDF-7

DMN2011UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 14.2A 6UDFN

0
DMP2004K-7

DMP2004K-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 600MA SOT23-3

0
DMN24H11DS-7

DMN24H11DS-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 240V 270MA SOT23 T&R

303000
DMN601WKQ-7

DMN601WKQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 300MA SOT323

83399000
ZXMP6A16KTC

ZXMP6A16KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 5.4A TO252-3

0
DMN33D8LT-7

DMN33D8LT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 115MA SOT523

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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