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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMG6402LDM-7

DMG6402LDM-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 5.3A SOT26

13817
DMT4004LPS-13

DMT4004LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 26A PWRDI5060

1857
DMN6075S-13

DMN6075S-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 2A SOT23

0
DMNH6042SK3-13

DMNH6042SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 25A TO252-4L

5000
DMG3418L-7

DMG3418L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 4A SOT23

781
ZXMP6A17KTC

ZXMP6A17KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 4.4A TO252-3

53295000
DMN3033LSNQ-7

DMN3033LSNQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 6A SC59

15000
ZVN4424A

ZVN4424A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 240V 260MA TO92-3

11392
DMN10H100SK3-13

DMN10H100SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 18A TO252

445137500
ZXMN2B01FTA

ZXMN2B01FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 2.1A SOT23-3

1432623000
ZVP0545ASTZ

ZVP0545ASTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 450V 45MA E-LINE

0
DMTH6006SPS-13

DMTH6006SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI5060

0
ZXMN6A08GQTA

ZXMN6A08GQTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 3.8A SOT223

0
DMP2104V-7

DMP2104V-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 2.1A SOT563

2001118000
ZXMN2A02N8TA

ZXMN2A02N8TA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 8.3A 8SO

50011500
DMN3300U-7

DMN3300U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 2A SOT23-3

609
DMT3002LPS-13

DMT3002LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 100A PWRDI5060-8

0
DMP6110SVTQ-13

DMP6110SVTQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 7.3A TSOT26

0
ZVN4206GTA

ZVN4206GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1A SOT223

7419
ZXMN10A11GTA

ZXMN10A11GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 1.7A SOT223

483919000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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