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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
ZXMP6A13FQTA

ZXMP6A13FQTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 900MA SOT23

25291
DMNH10H028SPS-13

DMNH10H028SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 40A PWRDI5060-8

10000
DMN2450UFD-7

DMN2450UFD-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 900MA 3DFN

2112
DMP3013SFV-13

DMP3013SFV-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 12A PWRDI3333

0
DMN3115UDM-7

DMN3115UDM-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 3.2A SOT-26

7289000
DMT3009UFVW-13

DMT3009UFVW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 10.6A/30A PWRDI

0
DMT10H009LPS-13

DMT10H009LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI5060

0
DMTH10H010LCTB-13

DMTH10H010LCTB-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 108A TO220AB

800
DMN63D1LW-13

DMN63D1LW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 380MA SOT323

160000
DMN3060LCA3-7

DMN3060LCA3-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 3.9A X4DSN1006-3

0
BSS84W-7-F

BSS84W-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 50V 130MA SOT323

0
DMP2069UFY4-7

DMP2069UFY4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 2.5A DFN2015H4-3

811
DMTH6004LPS-13

DMTH6004LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 22A PWRDI5060

4073
DMPH4013SK3-13

DMPH4013SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 55A TO252 T&R

0
DMN2013UFDE-7

DMN2013UFDE-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 10.5A 6UDFN

0
ZXMP10A13FTA

ZXMP10A13FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 600MA SOT23-3

119007
DMP6050SPS-13

DMP6050SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 5.7A PWRDI5060-8

97812500
DMN22M5UFG-7

DMN22M5UFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 27A POWERDI3333

70
DMN2024UFDF-13

DMN2024UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 7.1A 6UDFN

0
DMN63D1L-13

DMN63D1L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 380MA SOT23

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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