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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMTH6005LFG-7

DMTH6005LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 19.7A/100A PWRDI

4000
ZVN4210GTA

ZVN4210GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 800MA SOT223

2247
DMS3016SFG-7

DMS3016SFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 7A POWERDI3333-8

0
DMN4034SSS-13

DMN4034SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 5.4A 8SO

2385
DMN65D8L-7

DMN65D8L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 310MA SOT23

645770
ZXMP4A16GQTC

ZXMP4A16GQTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V SOT223

0
DMN10H220LE-13

DMN10H220LE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 2.3A SOT223

0
ZXMN3B01FTC

ZXMN3B01FTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 1.7A SOT23

0
DMP4025SFG-13

DMP4025SFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 4.65A PWRDI3333

0
DMT3020LFVW-7

DMT3020LFVW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 38A POWERDI3333

0
DMN2056U-7

DMN2056U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHANNEL 20V 4A SOT23-3

0
DMN3070SSN-7

DMN3070SSN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 4.2A SC59

2694
DMG7401SFGQ-13

DMG7401SFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 9.8A PWRDI3333-8

6000
DMT6009LK3-13

DMT6009LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 13.3A/57A TO252

1548
ZVN4306AV

ZVN4306AV

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1.1A TO92-3

415316000
DMN2005UFG-13

DMN2005UFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 18.1A PWRDI3333

108
DMN3025LFV-7

DMN3025LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 25A POWERDI3333

0
DMN3016LFDF-13

DMN3016LFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 12A 6UDFN

0
DMN3007LSS-13

DMN3007LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 16A 8SOP

0
DMTH8012LPSQ-13

DMTH8012LPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 10A PWRDI5060

5500

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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