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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMT10H015LK3-13

DMT10H015LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHANNEL 100V 50A TO252

170
DMT6030LFDF-7

DMT6030LFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 6.8A 6UDFN

60000
DMTH32M5LPS-13

DMTH32M5LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 170A PWRDI5060-8

0
DMN55D0UTQ-7

DMN55D0UTQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 160MA SOT-523

0
DMT10H015LCG-7

DMT10H015LCG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 9.4A/34A 8DFN

10000
DMP2010UFG-13

DMP2010UFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 12.7A PWRDI3333

0
DMP1100UCB4-7

DMP1100UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 2.5A WLB0808

5343
DMT10H015LFG-13

DMT10H015LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI3333

0
DMT47M2SFVW-13

DMT47M2SFVW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V PWRDI3333

0
ZXMN3A01FTA

ZXMN3A01FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 1.8A SOT23-3

211873
DMG4468LFG

DMG4468LFG

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 7.62A 8DFN

2608
2N7002TQ-7-F

2N7002TQ-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 115MA SOT523

17035
DMTH6009LK3Q-13

DMTH6009LK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 14.2A/59A TO252

0
DMN10H170SFGQ-13

DMN10H170SFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI3333

0
DMP2021UFDE-7

DMP2021UFDE-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 11.1A 6UDFN

9204000
DMN53D0U-13

DMN53D0U-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 300MA SOT23

0
DMP32D4SW-7

DMP32D4SW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 250MA SOT323

13783
ZXMP10A16KTC

ZXMP10A16KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 3A TO252-3

5418
DMP2066LSN-7

DMP2066LSN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.6A SC59-3

22558
DMP1055USW-13

DMP1055USW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 3.8A SOT363

30000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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