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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMP2075UVT-7

DMP2075UVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 3.8A TSOT26 T&R

0
DMP45H21DHE-13

DMP45H21DHE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 450V 600MA SOT223

2555
DMP10H4D2S-13

DMP10H4D2S-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 270MA SOT23-3

0
ZXMP6A18KTC

ZXMP6A18KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 6.8A TO252-3

31570
DMTH10H010LCT

DMTH10H010LCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 108A TO220AB

842550
DMT6004SCT

DMT6004SCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A TO220-3

0
DMN3042L-13

DMN3042L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 5.8A SOT23

0
DMN67D8L-13

DMN67D8L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 210MA SOT23

0
DMP2067LVT-13

DMP2067LVT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A TSOT26

0
ZVN3310FTA

ZVN3310FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 100MA SOT23-3

33804
DMN3065LW-13

DMN3065LW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 4A SOT323

61576
DMG2305UXQ-7

DMG2305UXQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A SOT23

0
DMP2008UFG-7

DMP2008UFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 14A PWRDI3333

91116
DMP3026SFDE-13

DMP3026SFDE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 10.4A 6UDFN

0
ZVN4206ASTZ

ZVN4206ASTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 600MA E-LINE

2000
ZXMN6A07FTA

ZXMN6A07FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1.2A SOT23-3

88296
DMN2450UFB4-7B

DMN2450UFB4-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1A X2-DFN1006-3

0
DMN6140LQ-13

DMN6140LQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1.6A SOT23

0
DMTH6010LPSQ-13

DMTH6010LPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 13.5A PWRDI5060

685
ZXMN6A08E6TA

ZXMN6A08E6TA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 2.8A SOT26

13

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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