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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPI60R099CPAAKSA1

IPI60R099CPAAKSA1

IR (Infineon Technologies)

PFET, 31A I(D), 600V, 0.105OHM,

17276
NDTL01N60ZT3G

NDTL01N60ZT3G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 600V 250MA SOT223

0
FCP165N65S3R0

FCP165N65S3R0

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 650V 19A TO220-3

0
IPC100N04S5L2R6ATMA1

IPC100N04S5L2R6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 100A 8TDSON-34

1911
SIDR668ADP-T1-RE3

SIDR668ADP-T1-RE3

Vishay / Siliconix

MOSFET N-CH 100V 23.3A/104A PPAK

5626
IRFP4229PBF

IRFP4229PBF

IR (Infineon Technologies)

MOSFET N-CH 250V 44A TO247AC

0
FDC638P

FDC638P

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 20V 4.5A SUPERSOT6

422
IRF350

IRF350

NTE Electronics, Inc.

MOSFET N-CH 400V 14A TO3

104
SI8802DB-T2-E1

SI8802DB-T2-E1

Vishay / Siliconix

MOSFET N-CH 8V 4MICROFOOT

3333
HUF76407D3ST

HUF76407D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET P

24245
NTE4151PT1G

NTE4151PT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 20V 760MA SC89-3

2210
NDP6020P

NDP6020P

POWER FIELD-EFFECT TRANSISTOR, 2

903
R6006JNJGTL

R6006JNJGTL

ROHM Semiconductor

MOSFET N-CH 600V 6A LPTS

1098
IRF2903ZPBF

IRF2903ZPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 75A TO220AB

0
DMP32M6SPS-13

DMP32M6SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 100A PWRDI5060-8

0
IRFR8314TRPBF

IRFR8314TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 90A DPAK

1733
2SK2956-E

2SK2956-E

Renesas Electronics America

N-CHANNEL POWER MOSFET

958
PHB33NQ20T,118

PHB33NQ20T,118

Nexperia

MOSFET N-CH 200V 32.7A D2PAK

913
SIHP080N60E-GE3

SIHP080N60E-GE3

Vishay / Siliconix

E SERIES POWER MOSFET TO-220AB,

0
CXDM1002N TR PBFREE

CXDM1002N TR PBFREE

Central Semiconductor

MOSFET N-CH 100V 2A SOT-89

2148

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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