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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AO6405

AO6405

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 5A 6TSOP

15709
NVHL110N65S3F

NVHL110N65S3F

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 650V 30A TO247-3

186
IRLU3636PBF

IRLU3636PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 50A IPAK

2545
NVTFS5C453NLWFTAG

NVTFS5C453NLWFTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 40V 107A 8WDFN

0
SIS888DN-T1-GE3

SIS888DN-T1-GE3

Vishay / Siliconix

MOSFET N-CH 150V 20.2A PPAK

3097
APT21M100J

APT21M100J

Roving Networks / Microchip Technology

MOSFET N-CH 1000V 21A ISOTOP

11
IPAW60R600CEXKSA1

IPAW60R600CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 10.3A TO220

347
SIHU3N50D-E3

SIHU3N50D-E3

Vishay / Siliconix

MOSFET N-CH 500V 3A TO251AA

0
CSD18514Q5A

CSD18514Q5A

Texas Instruments

MOSFET N-CH 40V 89A 8VSON

5139
IPD100N04S4L02ATMA1

IPD100N04S4L02ATMA1

IR (Infineon Technologies)

IPD100N04 - 20V-40V N-CHANNEL AU

39736
IXTH160N15T

IXTH160N15T

Wickmann / Littelfuse

MOSFET N-CH 150V 160A TO247

1080
STL13N65M2

STL13N65M2

STMicroelectronics

MOSFET N-CH 650V 6.5A POWERFLAT

0
FKI06190

FKI06190

Sanken Electric Co., Ltd.

MOSFET N-CH 60V 30A TO220F

0
R6509ENJTL

R6509ENJTL

ROHM Semiconductor

MOSFET N-CH 650V 9A LPTS

90
IPP65R380C6

IPP65R380C6

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 1

0
IPS80R2K0P7AKMA1

IPS80R2K0P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 3A TO251-3

0
BSC034N06NSATMA1

BSC034N06NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 100A TDSON

520
SI3483CDV-T1-GE3

SI3483CDV-T1-GE3

Vishay / Siliconix

MOSFET P-CH 30V 8A 6TSOP

331105
IRF60B217

IRF60B217

IR (Infineon Technologies)

MOSFET N-CH 60V 60A TO220AB

3658
FDD86250-F085

FDD86250-F085

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 150V 50A TO252

616

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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