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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BSS138W-TP

BSS138W-TP

Micro Commercial Components (MCC)

MOSFET N-CH 50V 220MA SOT323

2377
DMT6005LFG-13

DMT6005LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI3333

0
FDB6030L

FDB6030L

MOSFET N-CH 30V 48A TO263AB

22487
2SK4097LS

2SK4097LS

MOSFET N-CH 500V 8.3A TO220FI

600
NVTFS5824NLTAG

NVTFS5824NLTAG

POWER FIELD-EFFECT TRANSISTOR

1500
NP50P06KDG-E1-AY

NP50P06KDG-E1-AY

Renesas Electronics America

MOSFET P-CH 60V 50A TO263

0
IPP70N04S406AKSA1

IPP70N04S406AKSA1

IR (Infineon Technologies)

MOSFET N-CH 40V 70A TO220-3-1

432
SSS10N60B

SSS10N60B

N-CHANNEL POWER MOSFET

470
RD3U040CNTL1

RD3U040CNTL1

ROHM Semiconductor

MOSFET N-CH 250V 4A TO252

9
TSM480P06CP ROG

TSM480P06CP ROG

TSC (Taiwan Semiconductor)

MOSFET P-CHANNEL 60V 20A TO252

4284
IXFH34N50P3

IXFH34N50P3

Wickmann / Littelfuse

MOSFET N-CH 500V 34A TO247AD

0
TPH8R008NH,L1Q

TPH8R008NH,L1Q

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 80V 34A 8SOP

4907
IRFB3004PBF

IRFB3004PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 195A TO220AB

0
BSC070N10NS5ATMA1

BSC070N10NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 80A TDSON

7329
NTMS5835NLR2G

NTMS5835NLR2G

MOSFET N-CH 40V 9.2A 8SOIC

5400
NX7002AK,215

NX7002AK,215

Nexperia

MOSFET N-CH 60V 190MA TO236AB

11948
IXFK102N30P

IXFK102N30P

Wickmann / Littelfuse

MOSFET N-CH 300V 102A TO264AA

0
FDB8445

FDB8445

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 40V 70A TO263AB

61611200
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 33A 8TDSON

781
SIS402DN-T1-GE3

SIS402DN-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 35A PPAK1212-8

24

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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