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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BUK6215-75C,118

BUK6215-75C,118

NXP Semiconductors

MOSFET N-CH 75V 57A DPAK

0
NVTFS4C25NTAG

NVTFS4C25NTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 10.1A/22.1A 8DFN

1046
RHP020N06T100

RHP020N06T100

ROHM Semiconductor

MOSFET N-CH 60V 2A MPT3

10555
TSM60NB150CF C0G

TSM60NB150CF C0G

TSC (Taiwan Semiconductor)

MOSFET N-CH 600V 24A ITO220S

36
IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 3.8A THIN-PAK

5000
FDPF18N20FT-G

FDPF18N20FT-G

MOSFET N-CH 200V 18A TO220F

1896
NTLJS5D0N03CTAG

NTLJS5D0N03CTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 11.2A 6PQFN

840
STB42N65M5

STB42N65M5

STMicroelectronics

MOSFET N-CH 650V 33A D2PAK

5943
RS3E135BNGZETB

RS3E135BNGZETB

ROHM Semiconductor

MOSFET N-CHANNEL 30V 9.5A 8SOP

0
FDG312P

FDG312P

MOSFET P-CH 20V 1.2A SC88

637772
IRFH7932TRPBF

IRFH7932TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 24A/104A PQFN

9493
IXFA6N120P-TRL

IXFA6N120P-TRL

Wickmann / Littelfuse

MOSFET N-CH 1200V 6A TO263

0
STP70NF03L

STP70NF03L

STMicroelectronics

MOSFET N-CH 30V 70A TO220AB

0
STW75NF20

STW75NF20

STMicroelectronics

MOSFET N-CH 200V 75A TO247-3

0
FDP6035AL

FDP6035AL

MOSFET N-CH 30V 48A TO220-3

106637
IRFR210TRPBF-BE3

IRFR210TRPBF-BE3

Vishay / Siliconix

MOSFET N-CH 200V 2.6A DPAK

2000
2SK669K-AC

2SK669K-AC

N-CHANNEL SMALL SIGNAL MOSFET

5560
IPB60R040C7ATMA1

IPB60R040C7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 50A TO263-3

774
FDPF045N10A

FDPF045N10A

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 100V 67A TO220F

1697
SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

Vishay / Siliconix

MOSFET N-CH 600V 10A PPAK SO-8

1535

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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