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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
HUF75939S3ST

HUF75939S3ST

N-CHANNEL POWER MOSFET

800
NVMFS5C423NLT1G

NVMFS5C423NLT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 40V 126A 5DFN

0
SI4630DY-T1-E3

SI4630DY-T1-E3

Vishay / Siliconix

MOSFET N-CH 25V 40A 8SO

840
SIHG22N60EF-GE3

SIHG22N60EF-GE3

Vishay / Siliconix

MOSFET N-CH 600V 19A TO247AC

533
HUF75925D3ST

HUF75925D3ST

MOSFET N-CH 200V 11A TO252AA

2631
SI7117DN-T1-GE3

SI7117DN-T1-GE3

Vishay / Siliconix

MOSFET P-CH 150V 2.17A PPAK

2700
ISL9N312AS3ST

ISL9N312AS3ST

N-CHANNEL POWER MOSFET

42422
STD25NF20

STD25NF20

STMicroelectronics

MOSFET N-CH 200V 18A DPAK

0
IRFI640GPBF

IRFI640GPBF

Vishay / Siliconix

MOSFET N-CH 200V 9.8A TO220-3

47
BUK9523-75A,127

BUK9523-75A,127

NXP Semiconductors

MOSFET N-CH 75V 53A TO220AB

5307
DMN1008UFDF-7

DMN1008UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 12.2A 6UDFN

0
HUF75332P3

HUF75332P3

MOSFET N-CH 55V 60A TO220-3

9713
IRFPS40N50LPBF

IRFPS40N50LPBF

Vishay / Siliconix

MOSFET N-CH 500V 46A SUPER247

938
IPW65R095C7

IPW65R095C7

IR (Infineon Technologies)

MOSFET N-CH 650V 24A TO247

0
NTK3139PT5G

NTK3139PT5G

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 20V 660MA SOT723

104000
IXTH64N10L2

IXTH64N10L2

Wickmann / Littelfuse

MOSFET N-CH 100V 64A TO247

3960
SI3456DDV-T1-E3

SI3456DDV-T1-E3

Vishay / Siliconix

MOSFET N-CH 30V 6.3A 6TSOP

2957
IPU60R1K5CEAKMA2

IPU60R1K5CEAKMA2

IR (Infineon Technologies)

MOSFET N-CH 600V 3.1A TO251-3

0
APT9M100B

APT9M100B

Roving Networks / Microchip Technology

MOSFET N-CH 1000V 9A TO247

0
BSD316SNH6327XTSA1

BSD316SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 1.4A SOT363-6

9820

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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