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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
FDS8840NZ

FDS8840NZ

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 40V 18.6A 8SOIC

12500
PHP33NQ20T,127

PHP33NQ20T,127

Nexperia

MOSFET N-CH 200V 32.7A TO220AB

4000
IRFH7921TRPBF

IRFH7921TRPBF

IR (Infineon Technologies)

IRFH7921 - HEXFET POWER MOSFET

0
SI7655ADN-T1-GE3

SI7655ADN-T1-GE3

Vishay / Siliconix

MOSFET P-CH 20V 40A PPAK1212-8S

8976
AOTF5N50FD

AOTF5N50FD

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5A TO220-3F

0
SI7119DN-T1-E3

SI7119DN-T1-E3

Vishay / Siliconix

MOSFET P-CH 200V 3.8A PPAK1212-8

74
IPB65R660CFDAATMA1

IPB65R660CFDAATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 6A D2PAK

0
FDB8870

FDB8870

POWER FIELD-EFFECT TRANSISTOR, 2

61588
APT6021BFLLG

APT6021BFLLG

Roving Networks / Microchip Technology

MOSFET N-CH 600V 29A TO247

0
PSMNR90-40SSHJ

PSMNR90-40SSHJ

Nexperia

MOSFET N-CH 40V 375A LFPAK88

1651
AUIRFR2407TRL

AUIRFR2407TRL

IR (Infineon Technologies)

AUTOMOTIVE POWER MOSFET

2322
NTTS2P02R2

NTTS2P02R2

MOSFET P-CH 20V 2.4A MICRO8

4000
BSO051N03MS G

BSO051N03MS G

IR (Infineon Technologies)

MOSFET N-CH 30V 14A 8DSO

2488
CSD16556Q5B

CSD16556Q5B

Texas Instruments

MOSFET N-CH 25V 100A 8VSON

0
CPH6350-TL-W

CPH6350-TL-W

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 30V 6A 6CPH

43623
STDLED625H

STDLED625H

STMicroelectronics

MOSFET N-CH 620V 4.5A DPAK

0
NVGS4111PT1G

NVGS4111PT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 30V 3.7A 6TSOP

6000
DMP1080UCB4-7

DMP1080UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 3.3A U-WLB1010-4

3147
BSC22DN20NS3GATMA1

BSC22DN20NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 200V 7A TDSON-8-5

0
BUK7M45-40EX

BUK7M45-40EX

Nexperia

MOSFET N-CH 40V 19A LFPAK33

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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