Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IPT60R065S7XTMA1 IR (Infineon Technologies)	MOSFET N-CH 600V 8A 8HSOF	1990
RS1E300GNTB ROHM Semiconductor	MOSFET N-CH 30V 30A 8-HSOP	20
TK9A60D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 9A TO220SIS	0
FQPF6N80	MOSFET N-CH 800V 3.3A TO220F	1582
BUK7E2R3-40C,127 Nexperia	MOSFET N-CH 40V 100A I2PAK	4893
IPB120N08S404ATMA1 IR (Infineon Technologies)	MOSFET N-CH 80V 120A D2PAK	15351
IRF6678 IR (Infineon Technologies)	MOSFET N-CH 30V 30A DIRECTFET	4905
IPW90R800C3FKSA1 IR (Infineon Technologies)	MOSFET N-CH 900V 6.9A TO247-3	0
PMV62XN215 NXP Semiconductors	SMALL SIGNAL FET	9000
RM180N60T2 Rectron USA	MOSFET N-CH 60V 180A TO220-3	0
CSD18510Q5BT Texas Instruments	MOSFET N-CH 40V 300A 8VSON	329
FDP6030BL	POWER FIELD-EFFECT TRANSISTOR, 4	4800
FDD18N20LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 16A DPAK	50
FDP6676S	N-CHANNEL POWER MOSFET	1485
RQ6E045SNTR ROHM Semiconductor	MOSFET N-CH 30V 4.5A TSMT6	2990
IPLK60R360PFD7ATMA1 IR (Infineon Technologies)	MOSFET N-CH 600V 13A THIN-PAK	5000
STD5N52K3 STMicroelectronics	MOSFET N-CH 525V 4.4A DPAK	2670
STP11N52K3 STMicroelectronics	MOSFET N-CH 525V 10A TO220	0
VN2222LL-G-P013 Roving Networks / Microchip Technology	MOSFET N-CH 60V 230MA TO92-3	0
STF20N95K5 STMicroelectronics	MOSFET N-CH 950V 17.5A TO220FP	967

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS