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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
RMW200N03TB

RMW200N03TB

ROHM Semiconductor

MOSFET N-CH 30V 20A 8PSOP

4774
AUIRF1018ES

AUIRF1018ES

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

10917
DMN1019UFDE-7

DMN1019UFDE-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N CH 12V 11A U-DFN2020-6E

671743
IRFR3708TRRPBF

IRFR3708TRRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 61A DPAK

0
IRFR5505TRPBF

IRFR5505TRPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 18A DPAK

0
IRFS38N20DTRLP

IRFS38N20DTRLP

IR (Infineon Technologies)

MOSFET N-CH 200V 43A D2PAK

0
RM2309E

RM2309E

Rectron USA

MOSFET P-CHANNEL 30V SOT23

0
IPB180N10S403ATMA1

IPB180N10S403ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 180A TO263-7-3

10577
NTD4302T4G

NTD4302T4G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 8.4A/68A DPAK

2193
IRFB4410ZPBF

IRFB4410ZPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 97A TO220AB

0
CSD19538Q2T

CSD19538Q2T

Texas Instruments

MOSFET N-CH 100V 13.1A 6WSON

18139750
IPW90R500C3XKSA1

IPW90R500C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 900V 11A TO247-3

0
FDP6030L

FDP6030L

MOSFET N-CH 30V 48A TO220-3

63536
IPS60R400CEAKMA1

IPS60R400CEAKMA1

IR (Infineon Technologies)

CONSUMER

0
DMN3009LFVW-13

DMN3009LFVW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 60A POWERDI3333

0
FQI5N15TU

FQI5N15TU

MOSFET N-CH 150V 5.4A I2PAK

5717
IXTP56N15T

IXTP56N15T

Wickmann / Littelfuse

MOSFET N-CH 150V 56A TO220AB

2000
FQP6N40CF

FQP6N40CF

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 400V 6A TO220-3

3765000
IXFK100N10

IXFK100N10

Wickmann / Littelfuse

MOSFET N-CH 100V 100A TO264AA

0
SIHD6N62E-GE3

SIHD6N62E-GE3

Vishay / Siliconix

MOSFET N-CH 620V 6A DPAK

2987

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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