Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STD70N6F3 STMicroelectronics	MOSFET N-CH 60V 70A DPAK	0
AUIRFB4610 IR (Infineon Technologies)	AUTOMOTIVE HEXFET N CHANNEL	11050
BSS123LT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 170MA SOT23-3	28155
CSD17571Q2 Texas Instruments	MOSFET N-CH 30V 22A 6SON	13178
IRFU2405PBF IR (Infineon Technologies)	MOSFET N-CH 55V 56A IPAK	14648
BS270-D74Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 400MA TO92-3	3871
IAUT300N08S5N012ATMA2 IR (Infineon Technologies)	MOSFET N-CH 80V 300A 8HSOF	0
DMTH10H010SCT Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 100V 100A TO220AB	3600
IRFRC20TRLPBF Vishay / Siliconix	MOSFET N-CH 600V 2A DPAK	2012
PSMN8R5-40MLDX Nexperia	MOSFET N-CH 40V 60A LFPAK33	4500
BSS138Q-7-F Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 50V 200MA SOT23-3	0
DMNH4011SK3Q-13 Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 40V 50A TO252	10000
SQ4401EY-T1_GE3 Vishay / Siliconix	MOSFET P-CH 40V 17.3A 8SO	6118
FQU5N50CTU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 4A IPAK	10080
HUFA75344S3S	MOSFET N-CH 55V 75A D2PAK	1880
FDS7064N7	MOSFET N-CH 30V 16.5A 8SO	498
NDS0605 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 180MA SOT-23	0
FQU3P20TU	MOSFET P-CH 200V 2.4A IPAK	13384
IRF8734TRPBF IR (Infineon Technologies)	MOSFET N-CH 30V 21A 8SO	13789
AO4492 Alpha and Omega Semiconductor, Inc.	MOSFET N CH 30V 14A 8SOIC	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS