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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFP150A

IRFP150A

MOSFET N-CH 100V 43A TO3PN

0
BUK9640-100A,118

BUK9640-100A,118

Nexperia

MOSFET N-CH 100V 39A D2PAK

4000
DMN2044UCB4-7

DMN2044UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 3.3A U-WLB1010-4

1450
RQ6E045TNTR

RQ6E045TNTR

ROHM Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

3518
PSMN5R0-100ES,127

PSMN5R0-100ES,127

Nexperia

MOSFET N-CH 100V 120A I2PAK

25230
AON1606

AON1606

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 700MA 3DFN

0
IXFK50N85X

IXFK50N85X

Wickmann / Littelfuse

MOSFET N-CH 850V 50A TO264

295
SSM3K36FS,LF

SSM3K36FS,LF

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 20V 500MA SSM

0
TP2540N3-G-P002

TP2540N3-G-P002

Roving Networks / Microchip Technology

MOSFET P-CH 400V 86MA TO92-3

0
IPP139N08N3GXKSA1

IPP139N08N3GXKSA1

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

632
TPIC5421LDW

TPIC5421LDW

Texas Instruments

N-CHANNEL POWER MOSFET

0
R6006KND3TL1

R6006KND3TL1

ROHM Semiconductor

MOSFET N-CH 600V 6A TO252

2470
HUF76645P3

HUF76645P3

MOSFET N-CH 100V 75A TO220-3

1230
FCMT199N60

FCMT199N60

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 600V 20.2A POWER88

730258000
BUK965R8-100E,118

BUK965R8-100E,118

Nexperia

MOSFET N-CH 100V 120A D2PAK

4875
STL13N60M6

STL13N60M6

STMicroelectronics

MOSFET N-CH 600V 7A POWERFLAT HV

2914
BSZ097N04LSGATMA1

BSZ097N04LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 12A/40A 8TSDSON

28748
IPAN60R125PFD7SXKSA1

IPAN60R125PFD7SXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 25A TO220

1332
IRF3205ZLPBF

IRF3205ZLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO262

0
IPA045N10N3GXKSA1

IPA045N10N3GXKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 64A TO220-FP

500

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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