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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
CWDM3011P TR13 PBFREE

CWDM3011P TR13 PBFREE

Central Semiconductor

MOSFET P-CH 30V 11A 8SOIC

2500
IRF3709SPBF

IRF3709SPBF

IR (Infineon Technologies)

HEXFET SMPS POWER MOSFET

3507
IXTA42N15T-TRL

IXTA42N15T-TRL

Wickmann / Littelfuse

MOSFET N-CH 150V 42A TO263

1600
BUK7507-55B,127

BUK7507-55B,127

NXP Semiconductors

PFET, 119A I(D), 55V, 0.0071OHM,

3998
RUU002N05T106

RUU002N05T106

ROHM Semiconductor

MOSFET N-CH 50V 200MA UMT3

2900
IRF322

IRF322

N-CHANNEL HERMETIC MOS HEXFET

0
ZVP2106ASTZ

ZVP2106ASTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 280MA E-LINE

699612000
IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO247-3

0
IRLR014

IRLR014

Vishay / Siliconix

MOSFET N-CH 60V 7.7A DPAK

2309
AON7508

AON7508

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 26A/32A 8DFN

32498
IRFP250PBF

IRFP250PBF

Vishay / Siliconix

MOSFET N-CH 200V 30A TO247-3

1496
IRF1405ZPBF

IRF1405ZPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO220AB

120
IRF3710ZLPBF

IRF3710ZLPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
SIHG080N60E-GE3

SIHG080N60E-GE3

Vishay / Siliconix

E SERIES POWER MOSFET TO-247AC,

0
ES6U3T2CR

ES6U3T2CR

ROHM Semiconductor

MOSFET N-CH 30V 1.4A WEMT6

7960
STB18NM60ND

STB18NM60ND

STMicroelectronics

MOSFET N-CH 600V 13A D2PAK

0
RJK0305DPB-02#J0

RJK0305DPB-02#J0

Renesas Electronics America

MOSFET N-CH 30V 30A LFPAK

0
APT38F50J

APT38F50J

Roving Networks / Microchip Technology

MOSFET N-CH 500V 38A ISOTOP

0
IXFT69N30P

IXFT69N30P

Wickmann / Littelfuse

MOSFET N-CH 300V 69A TO268

1230
STP34N65M5

STP34N65M5

STMicroelectronics

MOSFET N-CH 650V 28A TO220

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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