Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDP8443	MOSFET N-CH 40V 20A/80A TO220-3	12615
FDD390N15ALZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 26A DPAK	10000
SQM100N02-3M5L_GE3 Vishay / Siliconix	MOSFET N-CH 20V 100A TO263	775
STL38N65M5 STMicroelectronics	MOSFET N-CH 650V PWRFLAT HV	2628
IPD80R600P7ATMA1 IR (Infineon Technologies)	MOSFET N-CH 800V 8A TO252-3	1858
ZXMN10A11KTC Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 100V 2.4A TO252-2	0
IPA60R099C6XKSA1 IR (Infineon Technologies)	MOSFET N-CH 600V 37.9A TO220-FP	20493
2SK2420 Sanken Electric Co., Ltd.	MOSFET N-CH 60V 30A TO220F	0
IRFR3607PBF IR (Infineon Technologies)	MOSFET N-CH 75V 56A DPAK	0
TPW4R50ANH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 92A 8DSOP	27892
SI7116DN-T1-E3 Vishay / Siliconix	MOSFET N-CH 40V 10.5A PPAK1212-8	57
RTR025N05HZGTL ROHM Semiconductor	MOSFET N-CH 45V 2.5A TSMT3	2946
STWA30N65DM6AG STMicroelectronics	MOSFET N-CH 650V 28A TO247	193
STF16NF25 STMicroelectronics	MOSFET N-CH 250V 14A TO220FP	1000
AOB190A60L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 20A TO263	12
FCH072N60F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 52A TO247-3	0
PSMN2R2-40BS,118 Nexperia	MOSFET N-CH 40V 100A D2PAK	3196
SI3134K-TP Micro Commercial Components (MCC)	MOSFET N-CH 20V 750MA SOT723	274
EPC2034C EPC	GANFET N-CH 200V 48A DIE	9816
IRLS3034PBF IR (Infineon Technologies)	MOSFET N-CH 40V 195A D2PAK	9217

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS