Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT10050LVFRG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 21A TO264	0
IRF7739L1TRPBF IR (Infineon Technologies)	MOSFET N-CH 40V 46A DIRECTFET	671
IPD110N12N3GBUMA1 IR (Infineon Technologies)	MOSFET N-CH 120V 75A TO252-3	0
NX3008NBKV/S500115 NXP Semiconductors	SMALL SIGNAL N-CHANNEL MOSFET	16000
AOD9T40P Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 400V 6.6A TO252	0
AOI294A Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 100V 55A TO251A	0
RJK005N03FRAT146 ROHM Semiconductor	MOSFET N-CH 30V 500MA SMT3	110
STD8N60DM2 STMicroelectronics	MOSFET N-CH 600V 8A DPAK	2339
SQ4005EY-T1_BE3 Vishay / Siliconix	MOSFET P-CHANNEL 12V 15A 8SOIC	2500
BUK969R0-60E,118 Nexperia	MOSFET N-CH 60V 75A D2PAK	1589
IPP80N08S2L07AKSA1 IR (Infineon Technologies)	MOSFET N-CH 75V 80A TO220-3	98
IXFN230N20T Wickmann / Littelfuse	MOSFET N-CH 200V 220A SOT227B	298
SUD35N10-26P-T4GE3 Vishay / Siliconix	MOSFET N-CH 100V 35A TO252	0
PSMN005-75B,118 Nexperia	MOSFET N-CH 75V 75A D2PAK	0
NVMFS5C612NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 38A/250A 5DFN	0
IRFR310TRLPBF Vishay / Siliconix	MOSFET N-CH 400V 1.7A DPAK	2975
SIHB16N50C-E3 Vishay / Siliconix	MOSFET N-CH 500V 16A D2PAK	1000
NVMYS014N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A/36A 4LFPAK	26806000
IXTP1N80P Wickmann / Littelfuse	MOSFET N-CH 800V 1A TO220AB	3400
BUK7Y153-100EX Nexperia	MOSFET N-CH 100V 9.4A LFPAK56	703

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS