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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB65R150CFDATMA2

IPB65R150CFDATMA2

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO263-3

0
STH410N4F7-6AG

STH410N4F7-6AG

STMicroelectronics

MOSFET N-CH 40V 200A H2PAK-6

1000
STP22N60M6

STP22N60M6

STMicroelectronics

MOSFET N-CH 600V 15A TO220

0
SPA20N60C3XKSA1

SPA20N60C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.7A TO220-31

4227
IPD60R280PFD7SAUMA1

IPD60R280PFD7SAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 12A TO252-3

2465
AOU3N60

AOU3N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2.5A TO251-3

0
DMT2004UFV-13

DMT2004UFV-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 24V 70A POWERDI3333

27000
DMP2023UFDF-7

DMP2023UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 7.6A 6UDFN

0
IPD90P03P4L04ATMA1

IPD90P03P4L04ATMA1

IR (Infineon Technologies)

MOSFET P-CH 30V 90A TO252-3

0
STD18N55M5

STD18N55M5

STMicroelectronics

MOSFET N-CH 550V 16A DPAK

0
SFW9Z34TM

SFW9Z34TM

MOSFET P-CH 60V 18A D2PAK

121328
FDD6630A

FDD6630A

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 21A TO252

3500
DMT2004UFDF-13

DMT2004UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 24V 14.1A 6UDFN

0
IPI530N15N3GXKSA1

IPI530N15N3GXKSA1

IR (Infineon Technologies)

PFET, 21A I(D), 150V, 0.053OHM,

0
AOT290L

AOT290L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 18A/140A TO220

0
ZVN2106GTA

ZVN2106GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 710MA SOT223

10539
DMP4015SSSQ-13

DMP4015SSSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 9.1A 8SO

3977
RM8N650LD

RM8N650LD

Rectron USA

MOSFET N-CHANNEL 650V 8A TO252-2

0
STD8N80K5

STD8N80K5

STMicroelectronics

MOSFET N CH 800V 6A DPAK

568
DMN2112SN-7

DMN2112SN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1.2A SC59-3

6158

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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