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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
FQP17P06

FQP17P06

POWER FIELD-EFFECT TRANSISTOR, 1

0
TSM5NC50CF C0G

TSM5NC50CF C0G

TSC (Taiwan Semiconductor)

MOSFET N-CH 500V 5A ITO220S

977
IXTY08N50D2

IXTY08N50D2

Wickmann / Littelfuse

MOSFET N-CH 500V 800MA TO252

0
NTD32N06-1G

NTD32N06-1G

MOSFET N-CH 60V 32A IPAK

3175
IPA60R160P7XKSA1

IPA60R160P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20A TO220

1494
TK11A50D(STA4,Q,M)

TK11A50D(STA4,Q,M)

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 500V 11A TO220SIS

0
STF35N65M5

STF35N65M5

STMicroelectronics

MOSFET N-CH 650V 27A TO220FP

0
SUM110P06-08L-E3

SUM110P06-08L-E3

Vishay / Siliconix

MOSFET P-CH 60V 110A TO263

4150
ZVP2110GTA

ZVP2110GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 310MA SOT223

5550
APT8020JFLL

APT8020JFLL

Roving Networks / Microchip Technology

MOSFET N-CH 800V 33A ISOTOP

0
IXFA3N120-TRL

IXFA3N120-TRL

Wickmann / Littelfuse

MOSFET N-CH 1200V 3A TO263

0
FDFS6N303

FDFS6N303

MOSFET N-CH 30V 6A 8SOIC

86655
IRFSL7537PBF

IRFSL7537PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 173A TO262

800
RJK1562DJE-00#Z0

RJK1562DJE-00#Z0

Renesas Electronics America

MOSFET N-CH 150V 1A TO92MOD

102357
PMPB29XPE,115

PMPB29XPE,115

Nexperia

MOSFET P-CH 20V 5A DFN2020MD-6

0
RM16P60LD

RM16P60LD

Rectron USA

MOSFET P-CHANNEL 60V 16A TO252-2

0
SSM3K15ACT(TPL3)

SSM3K15ACT(TPL3)

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 30V 100MA CST3

2458
FQP9N30

FQP9N30

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 300V 9A TO220-3

180
FDB52N20TM

FDB52N20TM

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 200V 52A D2PAK

2033
FDP8442

FDP8442

MOSFET N-CH 40V 23A/80A TO220-3

22479

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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