Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
BUK7Y72-80EX Nexperia	MOSFET N-CH 80V 16A LFPAK56	32
IPD50P03P4L11ATMA2 IR (Infineon Technologies)	MOSFET P-CH 30V 50A TO252-31	0
FQD4P25TF	MOSFET P-CH 250V 3.1A DPAK	1000
TPN1600ANH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 100V 17A 8TSON-ADV	0
IRF9Z34NSTRRPBF IR (Infineon Technologies)	MOSFET P-CH 55V 19A D2PAK	0
2N7002BKVL Nexperia	MOSFET N-CH 60V 350MA TO236AB	7933
FQPF12N60	MOSFET N-CH 600V 5.8A TO220F	55453
SQJ415EP-T1_GE3 Vishay / Siliconix	MOSFET P-CH 40V 30A PPAK SO-8	1482
BUZ101L IR (Infineon Technologies)	N-CHANNEL POWER MOSFET	5075
STS5N15F4 STMicroelectronics	MOSFET N-CH 150V 5A 8SO	1807
SI3455DV	P-CHANNEL MOSFET	11683
EPC2035 EPC	GANFET N-CH 60V 1A DIE	2506
PMV50EPEAR Nexperia	MOSFET P-CH 30V 4.2A TO236AB	1454
VN2222LLRLRA	MOSFET N-CH 60V 150MA TO92-3	0
FDMC8010ET30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 30A/174A POWER33	3653
SQD45P03-12_GE3 Vishay / Siliconix	MOSFET P-CH 30V 50A TO252	2071
RV2C014BCT2CL ROHM Semiconductor	MOSFET P-CH 20V 700MA DFN1006-3	16503
IPA80R1K4CEXKSA1 IR (Infineon Technologies)	MOSFET N-CH 800V 2.8A TO220	734
IRLZ44SPBF Vishay / Siliconix	MOSFET N-CH 60V 50A D2PAK	1588
IRFS4115-7PPBF IR (Infineon Technologies)	MOSFET N-CH 150V 105A D2PAK	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS