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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFZ24STRLPBF

IRFZ24STRLPBF

Vishay / Siliconix

MOSFET N-CH 60V 17A D2PAK

0
RJK0656DPB-00#J5

RJK0656DPB-00#J5

Renesas Electronics America

MOSFET N-CH 60V 40A LFPAK

0
AO7417

AO7417

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 1.9A SC70-6

0
RM11N800TI

RM11N800TI

Rectron USA

MOSFET N-CHANNEL 800V 11A TO220F

0
IXFK78N50P3

IXFK78N50P3

Wickmann / Littelfuse

MOSFET N-CH 500V 78A TO264AA

343
TK3R1P04PL,RQ

TK3R1P04PL,RQ

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CHANNEL 40V 58A DPAK

2479
APT6015LVRG

APT6015LVRG

Roving Networks / Microchip Technology

MOSFET N-CH 600V 38A TO264

0
NTMSD2P102LR2G

NTMSD2P102LR2G

MOSFET P-CH 20V 2.3A 8SOIC

7500
IPB026N06NATMA1

IPB026N06NATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 25A/100A D2PAK

70
IPA50R199CPXKSA1

IPA50R199CPXKSA1

IR (Infineon Technologies)

MOSFET N-CH 500V 17A TO220-FP

0
FDMC86520L

FDMC86520L

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 60V 13.5A/22A 8MLP

0
AUIRFS3207ZTRL

AUIRFS3207ZTRL

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

1967
DMN2009LSS-13

DMN2009LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 12A 8SOP

0
RF6C055BCTCR

RF6C055BCTCR

ROHM Semiconductor

MOSFET P-CHANNEL 20V 5.5A TUMT6

2990
PMZB200UNEYL

PMZB200UNEYL

Nexperia

MOSFET N-CH 30V 1.4A DFN1006B-3

1111
BSH205G2AR

BSH205G2AR

Nexperia

MOSFET P-CH 20V 2.6A TO236AB

0
AOT5N50

AOT5N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5A TO220

19
IRLR8726TRPBF

IRLR8726TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 86A DPAK

0
HUFA75307T3ST

HUFA75307T3ST

MOSFET N-CH 55V 2.6A SOT223-4

84000
IPD079N06L3GBTMA1

IPD079N06L3GBTMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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