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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
FDBL0150N60

FDBL0150N60

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 60V 240A 8HPSOF

0
SI7328DN-T1-GE3

SI7328DN-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 35A PPAK1212-8

0
CSD18532NQ5B

CSD18532NQ5B

Texas Instruments

MOSFET N-CH 60V 22A/100A 8VSON

4380
SIHP17N80AE-GE3

SIHP17N80AE-GE3

Vishay / Siliconix

MOSFET N-CH 800V 15A TO220AB

1050
PMZ600UNEZ

PMZ600UNEZ

Nexperia

MOSFET N-CH 20V 600MA DFN1006-3

0
FDMC86102LZ

FDMC86102LZ

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 100V 7A/18A 8MLP

665
TK13A50DA(STA4,Q,M

TK13A50DA(STA4,Q,M

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 500V 12.5A TO220SIS

0
STP20N95K5

STP20N95K5

STMicroelectronics

MOSFET N-CH 950V 17.5A TO220-3

1620
SUP40012EL-GE3

SUP40012EL-GE3

Vishay / Siliconix

MOSFET N-CH 40V 150A TO220AB

893
FDU8880

FDU8880

MOSFET N-CH 30V 13A/58A IPAK

349749
NTMFS4841NHT1G

NTMFS4841NHT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 8.6A/59A 5DFN

1911
NTLJS4149PTBG

NTLJS4149PTBG

MOSFET P-CH 30V 2.7A 6WDFN

309000
APT58M50JU3

APT58M50JU3

Roving Networks / Microchip Technology

MOSFET N-CH 500V 58A SOT227

0
CPH3457-TL-H

CPH3457-TL-H

MOSFET N-CH 30V 3A 3CPH

27000
AOW284

AOW284

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 15A/105A TO262

0
2SJ493-AZ

2SJ493-AZ

Renesas Electronics America

P-CHANNEL POWER MOSFET

395
SPP21N10

SPP21N10

IR (Infineon Technologies)

MOSFET N-CH 100V 21A TO220-3

0
SIA462DJ-T1-GE3

SIA462DJ-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 12A PPAK SC70-6

146
DMN2300UFD-7

DMN2300UFD-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1.21A 3DFN

0
IRFI840BTU

IRFI840BTU

N-CHANNEL POWER MOSFET

73732

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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