ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
NVTFS6H860NWFTAG

NVTFS6H860NWFTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 80V 8A/30A 8WDFN

4500
FDS6685

FDS6685

MOSFET P-CH 30V 8.8A 8SOIC

26033
SI2336DS-T1-GE3

SI2336DS-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 5.2A SOT23-3

956
IPI80N04S3-04

IPI80N04S3-04

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
BUK9E08-55B,127

BUK9E08-55B,127

NXP Semiconductors

PFET, 75A I(D), 55V, 0.0093OHM,

0
2SK669-AC

2SK669-AC

MOSFET N-CH 50V 100MA 3SPA

20000
FDU8876

FDU8876

MOSFET N-CH 30V 15A/73A IPAK

2750
IPW60R070P6XKSA1

IPW60R070P6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 53.5A TO247-3

0
IRFS7734PBF

IRFS7734PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 183A D2PAK

0
SI5419DU-T1-GE3

SI5419DU-T1-GE3

Vishay / Siliconix

MOSFET P-CH 30V 12A PPAK CHIPFET

6050
SIR178DP-T1-RE3

SIR178DP-T1-RE3

Vishay / Siliconix

MOSFET N-CH 20V 100A/430A PPAK

5982
HUFA76609D3S

HUFA76609D3S

MOSFET N-CH 100V 10A TO252AA

2044
BSL302SNH6327XTSA1

BSL302SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 7.1A TSOP-6-6

0
SI7469DP-T1-GE3

SI7469DP-T1-GE3

Vishay / Siliconix

MOSFET P-CH 80V 28A PPAK SO-8

5655
FQU2N90TU

FQU2N90TU

MOSFET N-CH 900V 1.7A IPAK

349140
R6006ANX

R6006ANX

ROHM Semiconductor

MOSFET N-CH 600V 6A TO220FM

1095
IPT015N10N5ATMA1

IPT015N10N5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 300A 8HSOF

0
IPB70N12S311ATMA1

IPB70N12S311ATMA1

IR (Infineon Technologies)

IPB70N12 - 120V-300V N-CHANNEL A

619
NTE2984

NTE2984

NTE Electronics, Inc.

MOSFET-PWR N-CHAN 60V 17A TO-220

420
IPB042N03LGATMA1

IPB042N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 70A TO263-3-2

1634

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top