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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
STB80NF55L-06T4

STB80NF55L-06T4

STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

831
FQP13N06L

FQP13N06L

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 60V 13.6A TO220-3

12458000
IRFH5300TRPBF

IRFH5300TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 40A/100A 8PQFN

5487
2SK1400A-E

2SK1400A-E

Renesas Electronics America

N-CHANNEL POWER MOSFET

240
FDMS8333L

FDMS8333L

Sanyo Semiconductor/ON Semiconductor

MOSFET N CH 40V 22A POWER 56

657294000
NTMFS6B14NT3G

NTMFS6B14NT3G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 100V 10A/50A 5DFN

0
IPB80N06S4L05ATMA1

IPB80N06S4L05ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 80A TO263-3

0
IRL40SC209

IRL40SC209

IR (Infineon Technologies)

MOSFET N-CH 40V 478A D2PAK

559
CSD18511Q5A

CSD18511Q5A

Texas Instruments

MOSFET N-CH 40V 159A 8VSON

0
BUK9M5R2-30EX

BUK9M5R2-30EX

Nexperia

MOSFET N-CH 30V 70A LFPAK33

1541
UJ3C120080K3S

UJ3C120080K3S

UnitedSiC

SICFET N-CH 1200V 33A TO247-3

3329
UF3SC065030B7S

UF3SC065030B7S

UnitedSiC

650V/30MOHM, SIC, STACKED FAST C

797
AON7534

AON7534

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A/30A 8DFN

0
SKI03063

SKI03063

Sanken Electric Co., Ltd.

MOSFET N-CH 30V 40A TO263

0
FKV575

FKV575

Sanken Electric Co., Ltd.

MOSFET N-CH 50V 75A TO220

3502
SFR9214TM

SFR9214TM

P-CHANNEL POWER MOSFET

412282
STB57N65M5

STB57N65M5

STMicroelectronics

MOSFET N-CH 650V 42A D2PAK

1642
IPB60R280CFD7ATMA1

IPB60R280CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 9A TO263-3-2

0
STF20N90K5

STF20N90K5

STMicroelectronics

MOSFET N-CH 900V 20A TO220FP

0
SCH2825-TL-E

SCH2825-TL-E

MOSFET N-CH 30V 1.6A 6SCH

622673

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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