Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
DMN61D9UWQ-7 Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 60V 400MA SOT323	3000
UPA2790GR-E1-A Renesas Electronics America	P-CHANNEL POWER MOSFET	10000
AO4264E Alpha and Omega Semiconductor, Inc.	MOSFET N-CHANNEL 60V 13.5A 8SO	0
NTP8G206NG	GANFET N-CH 600V 17A TO220-3	22
STD5N52U STMicroelectronics	MOSFET N-CH 525V 4.4A DPAK	0
STP110N55F6 STMicroelectronics	MOSFET N-CH 55V 110A TO220	0
IPB60R600CP IR (Infineon Technologies)	N-CHANNEL POWER MOSFET	6970
SK8603150L Panasonic	MOSFET N-CH 30V 26A/89A 8HSO	3000
TSM4ND65CI TSC (Taiwan Semiconductor)	MOSFET N-CH 650V 4A ITO220	3944
RSD046P05TL ROHM Semiconductor	MOSFET P-CH 45V 4.5A CPT3	51
SIHD14N60E-BE3 Vishay / Siliconix	MOSFET N-CH 600V 13A TO252AA	2996
NTMFS5C612NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 36A/235A 5DFN	0
IXTA64N10L2-TRL Wickmann / Littelfuse	MOSFET N-CH 100V 64A TO263	0
NTLGF3501NT1G	MOSFET N-CH 20V 2.8A 6DFN	6000
NTE2987 NTE Electronics, Inc.	MOSFET N-CH 100V 20A TO220	656
FDS7096N3	MOSFET N-CH 30V 14A 8SOIC	183789
FDMS1D4N03S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 211A 8PQFN	5598
IXFA14N60P Wickmann / Littelfuse	MOSFET N-CH 600V 14A TO263	400
STP27N60M2-EP STMicroelectronics	MOSFET N-CH 600V 20A TO220	0
IPP80R1K2P7XKSA1 IR (Infineon Technologies)	MOSFET N-CH 800V 4.5A TO220-3	45

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS