Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STB150NF04 STMicroelectronics	MOSFET N-CH 40V 80A D2PAK	0
FDP6670AL	MOSFET N-CH 30V 80A TO220-3	26871
CSD16570Q5B Texas Instruments	MOSFET N-CH 25V 100A 8VSON	6268
VN10KN3-G-P003 Roving Networks / Microchip Technology	MOSFET N-CH 60V 310MA TO92-3	0
NTE491SM NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 115MA SOT23	502
RM4N650IP Rectron USA	MOSFET N-CHANNEL 650V 4A TO251	0
NTD6415ANLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 23A DPAK	342500
DMN55D0UT-7 Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 50V 160MA SOT-523	490
FCU2250N80Z	MOSFET N-CH 800V 2.6A I-PAK	96353
IPD65R950C6ATMA1 IR (Infineon Technologies)	MOSFET N-CH 650V 4.5A TO252-3	0
SIHG22N50D-E3 Vishay / Siliconix	MOSFET N-CH 500V 22A TO247AC	426
BSS138NH6327XTSA2 IR (Infineon Technologies)	MOSFET N-CH 60V 230MA SOT23-3	101359
NTMYS4D1N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22A/100A LFPAK4	0
IRLMS1503TRPBF IR (Infineon Technologies)	MOSFET N-CH 30V 3.2A MICRO6	4133
SIHF30N60E-GE3 Vishay / Siliconix	MOSFET N-CH 600V 29A TO220	817
IRLI630GPBF Vishay / Siliconix	MOSFET N-CH 200V 6.2A TO220-3	1015
2SK4201-S19-AY Renesas Electronics America	N-CHANNEL POWER MOSFET	11000
TK60S06K3L(T6L1,NQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 60A DPAK	0
2SK1420	N-CHANNEL POWER MOSFET	7532
R6020PNJFRATL ROHM Semiconductor	MOSFET N-CH 600V 20A LPTS	834

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS