Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT6013JLL Roving Networks / Microchip Technology	MOSFET N-CH 600V 39A ISOTOP	0
STW58N65DM2AG STMicroelectronics	MOSFET N-CH 650V 48A TO247	577
STF42N60M2-EP STMicroelectronics	MOSFET N-CH 600V 34A TO220FP	4185
BSP324H6327XTSA1 IR (Infineon Technologies)	MOSFET N-CH 400V 170MA SOT223-4	0
NVD5C460NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 18A/73A DPAK	0
AO4406A Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 13A 8SOIC	0
SIHG21N65EF-GE3 Vishay / Siliconix	MOSFET N-CH 650V 21A TO247AC	440
STD5NM60T4 STMicroelectronics	MOSFET N-CH 600V 5A DPAK	2767
R6020ENJTL ROHM Semiconductor	MOSFET N-CH 600V 20A LPTS	360
RTE002P02TL ROHM Semiconductor	MOSFET P-CH 20V 200MA EMT3	0
IMW120R350M1HXKSA1 IR (Infineon Technologies)	SICFET N-CH 1.2KV 4.7A TO247-3	160
IRL2505STRLPBF IR (Infineon Technologies)	MOSFET N-CH 55V 104A D2PAK	779
DMN2005UFGQ-7 Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 20V 18A PWRDI3333	4000
IRF9Z20PBF Vishay / Siliconix	MOSFET P-CH 50V 9.7A TO220AB	37
RCJ081N20TL ROHM Semiconductor	MOSFET N-CH 200V 8A LPTS	926
SIR871DP-T1-GE3 Vishay / Siliconix	MOSFET P-CH 100V 48A PPAK SO-8	13878
NTMFS4943NT1G	MOSFET N-CH 30V 8.3A/41A 5DFN	165000
IRFF9221	MOSFET N-CH 150V 2.5A TO205AF	194
PMPB11EN,115 Nexperia	MOSFET N-CH 30V 9A DFN2020MD-6	0
IRF840ASTRRPBF Vishay / Siliconix	MOSFET N-CH 500V 8A D2PAK	528

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS