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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AO4296

AO4296

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 13.5A 8SOIC

0
APT50M65LLLG

APT50M65LLLG

Roving Networks / Microchip Technology

MOSFET N-CH 500V 67A TO264

0
BSS138-F085

BSS138-F085

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 50V 220MA SOT23

2568
RF1S70N06

RF1S70N06

MOSFET N-CH 60V 70A I2PAK

256
NTMSD2P102LR2

NTMSD2P102LR2

MOSFET P-CH 20V 2.3A 8SOIC

2492
SI2324A-TP

SI2324A-TP

Micro Commercial Components (MCC)

MOSFET N-CH 100V 2A SOT23

51
NP80N04MLG-S18-AY

NP80N04MLG-S18-AY

Renesas Electronics America

MOSFET N-CH 40V 80A TO220

7547
NTLUS3A39PZTAG

NTLUS3A39PZTAG

MOSFET P-CH 20V 3.4A 6UDFN

161642
DMT8008LPS-13

DMT8008LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 83A PWRDI5060-8

0
IRFP4137PBF

IRFP4137PBF

IR (Infineon Technologies)

MOSFET N-CH 300V 38A TO247AC

69
IPA60R080P7XKSA1

IPA60R080P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 37A TO220

1
IPI65R110CFD

IPI65R110CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

430
SI7106DN-T1-GE3

SI7106DN-T1-GE3

Vishay / Siliconix

MOSFET N-CH 20V 12.5A PPAK1212-8

2973
NTLUS4C12NTAG

NTLUS4C12NTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 6.8A 6UDFN

250669000
AOT190A60CL

AOT190A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220

976
STF25N60M2-EP

STF25N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 18A TO220FP

925
IXTQ50N25T

IXTQ50N25T

Wickmann / Littelfuse

MOSFET N-CH 250V 50A TO3P

0
PMG370XN,115

PMG370XN,115

NXP Semiconductors

MOSFET N-CH 30V 960MA 6TSSOP

111000
IPP50R399CP

IPP50R399CP

IR (Infineon Technologies)

IPP50R399 - 500V COOLMOS N-CHANN

0
IPD50N06S4L12ATMA2

IPD50N06S4L12ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-31

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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