Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTB082N65S3F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 40A D2PAK	11798800
RRQ020P03TCR ROHM Semiconductor	MOSFET P-CH 30V 2A TSMT6	0
PMN70EPEX Nexperia	MOSFET P-CH 30V 4.4A 6TSOP	0
FQB5N60TM	MOSFET N-CH 600V 5A D2PAK	910
BUK7Y25-40B/C3115 NXP Semiconductors	N-CHANNEL POWER MOSFET	10500
DMN2990UFA-7B Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 20V 510MA 3DFN	2147483647
SCT10N120H STMicroelectronics	SICFET N-CH 1200V 12A H2PAK-2	0
IPP60R520E6 IR (Infineon Technologies)	N-CHANNEL POWER MOSFET	0
IRLS3034-7PPBF IR (Infineon Technologies)	HEXFET POWER MOSFET	0
SQM110N05-06L_GE3 Vishay / Siliconix	MOSFET N-CH 55V 110A TO263	3175
APT29F80J Roving Networks / Microchip Technology	MOSFET N-CH 800V 31A ISOTOP	0
IPW80R360P7XKSA1 IR (Infineon Technologies)	MOSFET N-CH 800V 13A TO247-3	240
STF8N65M5 STMicroelectronics	MOSFET N-CH 650V 7A TO220FP	35
MTMF82310BBF Panasonic	MOSFET N-CH 30V 18A SO8-F1-B	5410
NDS8435A	MOSFET P-CH 30V 7.9A 8SOIC	148925
RD3P200SNTL1 ROHM Semiconductor	MOSFET N-CH 100V 20A TO252	2188
APT1003RBLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 4A TO247	0
ISL9N315AD3ST	N-CHANNEL POWER MOSFET	71429
2SK3019TL ROHM Semiconductor	MOSFET N-CH 30V 100MA EMT3	304227
PMN52XP115 NXP Semiconductors	P-CHANNEL MOSFET	636000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS