Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTD5802NT4G	POWER FIELD-EFFECT TRANSISTOR, 1	762
FQB7N60TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7.4A D2PAK	5235600
YJQ1216A-F1-1100HF	P-CH MOSFET 20V 16A DFN2020-6L-E	0
SI4463CDY-T1-GE3 Vishay / Siliconix	MOSFET P-CH 20V 13.6A/49A 8SO	0
STD9NM40N STMicroelectronics	MOSFET N-CH 400V 5.6A DPAK	0
HUF76429D3ST	MOSFET N-CH 60V 20A TO252AA	32351
STH245N75F3-6 STMicroelectronics	MOSFET N-CH 75V 180A H2PAK-6	0
IPB120N10S405ATMA1 IR (Infineon Technologies)	MOSFET N-CH 100V 120A D2PAK	0
MSJPF20N65-BP Micro Commercial Components (MCC)	MOSFET N-CH 650V 11A TO220F	2970
3LP01M-TL-H	MOSFET P-CH 30V 100MA 3MCP	1433000
NVHL020N090SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 900V 118A TO247-3	331
SQJ142ELP-T1_GE3 Vishay / Siliconix	MOSFET N-CH 40V 175A PPAK SO-8	3050
UPA620TT-E1-A Renesas Electronics America	MOSFET N-CH 20V 5A 6WSOF	8285
SQ3461EV-T1_GE3 Vishay / Siliconix	MOSFET P-CHANNEL 12V 8A 6TSOP	2291
FDMT800120DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 120V 20A 8DLCOOL88	3661
FDD5680 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 8.5A TO252	4432500
SPW12N50C3 IR (Infineon Technologies)	N-CHANNEL POWER MOSFET	3229
NVMFS5C680NLT1G	POWER FIELD-EFFECT TRANSISTOR	0
2N7002A-7 Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 60V 180MA SOT23	69007
STP100NF04 STMicroelectronics	MOSFET N-CH 40V 120A TO220AB	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS