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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
RSQ015P10HZGTR

RSQ015P10HZGTR

ROHM Semiconductor

MOSFET P-CH 100V 1.5A TSMT6

4965
NTD70N03RT4

NTD70N03RT4

MOSFET N-CH 25V 10A/32A DPAK

36821
IPD180N10N3GATMA1

IPD180N10N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 43A TO252-3

0
NTD4863NAT4G

NTD4863NAT4G

MOSFET N-CH 25V 9.2A/49A DPAK

285000
NTD65N03R-35G

NTD65N03R-35G

MOSFET N-CH 25V 9.5A IPAK

524038
DMG2302U-7

DMG2302U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 4.2A SOT23-3

57762
TSM7P06CP ROG

TSM7P06CP ROG

TSC (Taiwan Semiconductor)

MOSFET P-CHANNEL 60V 7A TO252

1103
IRL3705ZPBF

IRL3705ZPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO220AB

0
SI3129DV-T1-GE3

SI3129DV-T1-GE3

Vishay / Siliconix

P-CHANNEL 80 V (D-S) MOSFET TSOP

50
NTE2374

NTE2374

NTE Electronics, Inc.

MOSFET N-CHANNEL 200V 18A TO220

130
RCJ120N25TL

RCJ120N25TL

ROHM Semiconductor

MOSFET N-CH 250V 12A LPT

900
STW19NM60N

STW19NM60N

STMicroelectronics

MOSFET N-CH 600V 13A TO247

0
TPH3205WSBQA

TPH3205WSBQA

Transphorm

GANFET N-CH 650V 35A TO247-3

406
SPA21N50C3XKSA1

SPA21N50C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 560V 21A TO220-FP

0
DMP4025LSSQ-13

DMP4025LSSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 6A 8SO

50000
PSMN4R2-60PLQ

PSMN4R2-60PLQ

Nexperia

MOSFET N-CH 60V 130A TO220AB

286
SIS698DN-T1-GE3

SIS698DN-T1-GE3

Vishay / Siliconix

MOSFET N-CH 100V 6.9A PPAK1212-8

0
BUK96180-100A,118

BUK96180-100A,118

NXP Semiconductors

MOSFET N-CH 100V 11A D2PAK

15000
IRFIBC40GPBF

IRFIBC40GPBF

Vishay / Siliconix

MOSFET N-CH 600V 3.5A TO220-3

530
STD27N3LH5

STD27N3LH5

STMicroelectronics

MOSFET N-CH 30V 27A DPAK

302

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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