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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPT60R125G7XTMA1

IPT60R125G7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 20A 8HSOF

1497
2SJ210-T1B-A

2SJ210-T1B-A

Renesas Electronics America

P-CHANNEL SMALL SIGNAL MOSFET

0
IRFR220TRPBF

IRFR220TRPBF

Vishay / Siliconix

MOSFET N-CH 200V 4.8A DPAK

584
FCP190N60-GF102

FCP190N60-GF102

MOSFET N-CH 600V 20.2A TO220-3

653
STW28N60DM2

STW28N60DM2

STMicroelectronics

MOSFET N-CH 600V 21A TO247

602
IPW60R017C7XKSA1

IPW60R017C7XKSA1

IR (Infineon Technologies)

HIGH POWER_NEW

279
IXFH40N50Q

IXFH40N50Q

Wickmann / Littelfuse

MOSFET N-CH 500V 40A TO247AD

303690
PSMN1R2-30YLDX

PSMN1R2-30YLDX

Nexperia

MOSFET N-CH 30V 100A LFPAK56

0
SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay / Siliconix

MOSFET P-CH 40V 55A PPAK SO-8

21753
2N7002MTF

2N7002MTF

MOSFET N-CH 60V 115MA SOT23-3

0
STO67N60M6

STO67N60M6

STMicroelectronics

MOSFET N-CH 600V 34A TOLL

1730
IXFX32N80Q3

IXFX32N80Q3

Wickmann / Littelfuse

MOSFET N-CH 800V 32A PLUS247-3

0
SIHG17N80AEF-GE3

SIHG17N80AEF-GE3

Vishay / Siliconix

E SERIES POWER MOSFET WITH FAST

0
IRFTS9342TRPBF

IRFTS9342TRPBF

IR (Infineon Technologies)

MOSFET P-CH 30V 5.8A 6TSOP

705
PSMN3R7-100BSEJ

PSMN3R7-100BSEJ

Nexperia

MOSFET N-CH 100V 120A D2PAK

11005
IRFR222

IRFR222

N-CHANNEL POWER MOSFET

944
IPD50N06S409ATMA1

IPD50N06S409ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-3

0
NVMFS5C450NLAFT1G

NVMFS5C450NLAFT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 40V 110A 5DFN

0
MTB60N10E7L

MTB60N10E7L

N-CHANNEL POWER MOSFET

500
FDMC8588DC

FDMC8588DC

POWER FIELD-EFFECT TRANSISTOR, 1

532

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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