Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVMYS8D0N04CTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 16A/49A 4LFPAK	0
IXTP3N120 Wickmann / Littelfuse	MOSFET N-CH 1200V 3A TO220AB	0
IPP65R065C7XKSA1 IR (Infineon Technologies)	MOSFET N-CH 650V 33A TO220-3	0
SQJ460AEP-T1_GE3 Vishay / Siliconix	MOSFET N-CH 60V 32A PPAK SO-8	919
ZVNL120A Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 200V 180MA TO92-3	615512000
SPI20N60CFD IR (Infineon Technologies)	N-CHANNEL POWER MOSFET	400
STP150N3LLH6 STMicroelectronics	MOSFET N-CH 30V 80A TO220AB	0
DN1509N8-G Roving Networks / Microchip Technology	MOSFET N-CH 90V 360MA TO243AA	553
STD3NK80ZT4 STMicroelectronics	MOSFET N-CH 800V 2.5A DPAK	1249
3LP03M-TL-E Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	6000
TPH3208LDG Transphorm	GANFET N-CH 650V 20A 3PQFN	285
IRFP150PBF Vishay / Siliconix	MOSFET N-CH 100V 41A TO247-3	1148
IXFB62N80Q3 Wickmann / Littelfuse	MOSFET N-CH 800V 62A PLUS264	25
SSM3J118TU(TE85L) Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 30V 1.4A UFM	1865
NTD20N06-1G	MOSFET N-CH 60V 20A IPAK	1425
FDMS86200 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 9.6A/35A 8PQFN	2147483647
FQP14N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 14.4A TO220-3	2194
PSMN015-100YLX Nexperia	MOSFET N-CH 100V 69A LFPAK56	0
IPP80P03P4L04AKSA2 IR (Infineon Technologies)	MOSFET P-CH 30V 80A TO220-3	0
NTMFS4C08NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9A/52A 5DFN	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS