Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
BSD316SNL6327XT IR (Infineon Technologies)	MOSFET N-CH 30V 1.4A SOT363-6	1017
DMN2100UDM-7 Zetex Semiconductors (Diodes Inc.)	MOSFET N-CH 20V 3.3A SOT-26	3812
NVMFS5C628NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 28A/150A 5DFN	0
IPL60R285P7AUMA1 IR (Infineon Technologies)	MOSFET N-CH 600V 13A 4VSON	5808
IRLS4030TRL7PP IR (Infineon Technologies)	MOSFET N-CH 100V 190A D2PAK	3120
IRFU420APBF Vishay / Siliconix	MOSFET N-CH 500V 3.3A TO251AA	447
STD7ANM60N STMicroelectronics	MOSFET N-CH 600V 5A DPAK	300
SQ2308CES-T1_GE3 Vishay / Siliconix	MOSFET N-CH 60V 2.3A SOT23	11498
IPB180N06S4H1ATMA1 IR (Infineon Technologies)	MOSFET N-CH 60V 180A TO263-7	0
STD4NK80ZT4 STMicroelectronics	MOSFET N-CH 800V 3A DPAK	0
2SK3140-E Renesas Electronics America	N-CHANNEL POWER MOSFET	847
SI4427BDY-T1-GE3 Vishay / Siliconix	MOSFET P-CH 30V 9.7A 8SO	0
BUK9Y6R5-40HX Nexperia	MOSFET N-CH 40V 70A LFPAK56	1000
AONS21357 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 30V 21A/36A 8DFN	0
IRF1404STRLPBF IR (Infineon Technologies)	MOSFET N-CH 40V 162A D2PAK	0
TK7E80W,S1X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 800V 6.5A TO220	0
IRFR9110TRLPBF Vishay / Siliconix	MOSFET P-CH 100V 3.1A DPAK	2990
SCT3060AW7TL ROHM Semiconductor	TRANS SJT N-CH 650V 38A TO263-7	990
RQ6E060ATTCR ROHM Semiconductor	MOSFET P-CH 30V 6A TSMT6	2746
TP5335K1-G Roving Networks / Microchip Technology	MOSFET P-CH 350V 85MA TO236AB	40854

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS