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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRLS4030TRLPBF

IRLS4030TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 180A D2PAK

713
NTE2991

NTE2991

NTE Electronics, Inc.

MOSFET PWR N-CH 55V 110A TO-220

41
IPZA60R045P7XKSA1

IPZA60R045P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 61A TO247-4-3

0
SI4848DY-T1-E3

SI4848DY-T1-E3

Vishay / Siliconix

MOSFET N-CH 150V 2.7A 8SO

10493
IRF830STRLPBF

IRF830STRLPBF

Vishay / Siliconix

MOSFET N-CH 500V 4.5A D2PAK

4599
SI4176DY-T1-E3

SI4176DY-T1-E3

Vishay / Siliconix

MOSFET N-CH 30V 12A 8SO

0
IPL60R075CFD7AUMA1

IPL60R075CFD7AUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 33A 4VSON

2990
FDB33N25TM

FDB33N25TM

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 250V 33A D2PAK

4948
STP60NF06

STP60NF06

STMicroelectronics

MOSFET N-CH 60V 60A TO220AB

7758
IPD90P03P4L04ATMA2

IPD90P03P4L04ATMA2

IR (Infineon Technologies)

MOSFET P-CH 30V 90A TO252-31

0
IXFA14N60P-TRL

IXFA14N60P-TRL

Wickmann / Littelfuse

MOSFET N-CH 600V 14A TO263

800
IPD60R3K4CEAUMA1

IPD60R3K4CEAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 2.6A TO252-3

0
PSMN7R8-120PSQ

PSMN7R8-120PSQ

Nexperia

MOSFET N-CH 120V 70A I2PAK

4940
RM70P40LD

RM70P40LD

Rectron USA

MOSFET P-CHANNEL 40V 70A TO252-2

0
SUD50P10-43L-GE3

SUD50P10-43L-GE3

Vishay / Siliconix

MOSFET P-CH 100V 37.1A TO252

2415
STW7N95K3

STW7N95K3

STMicroelectronics

MOSFET N-CH 950V 7.2A TO247-3

596
BSC014N04LSIATMA1

BSC014N04LSIATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 31A/100A TDSON

61576
IXTK140N30P

IXTK140N30P

Wickmann / Littelfuse

MOSFET N-CH 300V 140A TO264

675
IRFF221

IRFF221

N-CHANNEL POWER MOSFET

900
IRLR3103TRPBF

IRLR3103TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 55A DPAK

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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