Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IRFR5505TRLPBF IR (Infineon Technologies)	MOSFET P-CH 55V 18A DPAK	0
SI7120ADN-T1-GE3 Vishay / Siliconix	MOSFET N-CH 60V 6A PPAK1212-8	2553
SQJ403BEEP-T1_GE3 Vishay / Siliconix	MOSFET P-CH 30V 30A PPAK SO-8	2570
RM10N100LD Rectron USA	MOSFET N-CH 100V 10A TO252-2	0
EKI06075 Sanken Electric Co., Ltd.	MOSFET N-CH 60V 78A TO220-3	0
NTMFS4837NT1G	MOSFET N-CH 30V 10A/74A 5DFN	219215
APT66F60B2 Roving Networks / Microchip Technology	MOSFET N-CH 600V 70A T-MAX	19
IXTY1R4N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 1.4A TO252	0
RDD022N60TL ROHM Semiconductor	MOSFET N-CH 600V 2A CPT3	0
IRF3007SPBF IR (Infineon Technologies)	MOSFET N-CH 75V 62A D2PAK	0
IXTY08N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 800MA TO252	245420
FQPF9N50C	MOSFET N-CH 500V 9A TO220-3	423558
IPLK70R600P7ATMA1 IR (Infineon Technologies)	IPLK70R600P7 - 700V COOLMOS P7	0
NVMFS5C468NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 5DFN	7
FQPF10N60C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 9.5A TO220F	8742000
SISS32ADN-T1-GE3 Vishay / Siliconix	MOSFET N-CH 80V 17.4A/63A PPAK	6050
IXFP12N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 12A TO220AB	291
SIHB22N60EF-GE3 Vishay / Siliconix	MOSFET N-CH 600V 19A D2PAK	41
PSMN7R8-120ESQ NXP Semiconductors	POWER FIELD-EFFECT TRANSISTOR, 7	430
AUIRF2805 IR (Infineon Technologies)	AUTOMOTIVE HEXFET N CHANNEL	1300

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS