Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
AUIRFSL4010-313TRL IR (Infineon Technologies)	MOSFET N-CH 100V 180A TO262	1875
RSD221N06TL ROHM Semiconductor	MOSFET N-CH 60V 22A CPT3	0
FCA47N60-F109 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 47A TO3PN	2582
IRFZ48PBF Vishay / Siliconix	MOSFET N-CH 60V 50A TO220AB	950
FQD630TF	MOSFET N-CH 200V 7A DPAK	221503
TK14A45DA(STA4,QM) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 450V 13.5A TO220SIS	0
IPD65R400CEAUMA1 IR (Infineon Technologies)	MOSFET N-CH 650V 15.1A TO252-3	2173
FKI10198 Sanken Electric Co., Ltd.	MOSFET N-CH 100V 31A TO220F	0
SIRA52DP-T1-GE3 Vishay / Siliconix	MOSFET N-CH 40V 60A PPAK SO-8	5940
IRLSL3036PBF IR (Infineon Technologies)	MOSFET N-CH 60V 195A TO262	1000
SSU1N60BTU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 900MA IPAK	0
NTMFS5C442NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 29A/140A 5DFN	7024500
IPN95R2K0P7ATMA1 IR (Infineon Technologies)	MOSFET N-CH 950V 4A SOT223	936
MTP9N25E	N-CHANNEL POWER MOSFET	4398
IRF8113TRPBF IR (Infineon Technologies)	MOSFET N-CH 30V 17.2A 8SO	2179
RAL045P01TCR ROHM Semiconductor	MOSFET P-CH 12V 4.5A TUMT6	2990
BUK7Y7R2-60EX Nexperia	MOSFET N-CH 60V LFPAK56 PWR-SO8	0
SQP120N06-6M7_GE3 Vishay / Siliconix	MOSFET N-CH 60V TO220AB	439
G2304	MOSFET N-CH 30V 3.6A SOT-23	5980
SQJQ480E-T1_GE3 Vishay / Siliconix	MOSFET N-CH 80V 150A PPAK 8 X 8	7042

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS